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TK4P50D(T6RSS-Q)

Part No TK4P50D(T6RSS-Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4A DPAK-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107443-TK4P50D(T6RSS-Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK4P50D(T6RSS-Q) CAD Model

Description

The Toshiba Semiconductor and Storage TK4P50D(T6RSS-Q) is an N-Channel MOSFET with a power dissipation of 80W (Tc).

  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 4A (Ta)
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate Charge: 9nC @ 10V
  • Maximum Input Capacitance: 380pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 2 Ohm @ 2A, 10V
  • Housing: D-Pak package
  • Drive Voltage: 10V
  • Market Popularity: Popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.2056 $58.5960
685+ $0.1686 $115.4910
1,060+ $0.1640 $173.8400
1,460+ $0.1582 $230.9720
1,895+ $0.1525 $288.9875
2,525+ $0.1374 $346.9350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 71,000 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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