The TK50E06K3A (also referred to as TK50E06K3) is a 60V, 5.0 mΩ N-channel Power MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power applications. It features low on-resistance, which minimizes conduction losses and enhances overall system efficiency. The device is available in a TO-220SM(W) package, facilitating ease of mounting and efficient thermal dissipation.

Applications:

• DC-DC converters
• AC-DC power supplies
• Motor control circuits
• Load switches
• Power management in computing and telecom equipment

Features:

• Low drain-source on-resistance: RDS(on) = 5.0 mΩ (typical) at VGS = 10 V
• Drain-source voltage: VDS = 60 V
• Continuous drain current: ID = 120 A
• Gate-source voltage: VGS = ±20 V
• Maximum channel temperature: 175 °C
• TO-220SM(W) package for efficient heat dissipation

Benefits:

• High Efficiency: Very low RDS(on) reduces conduction losses significantly, leading to improved efficiency.
• Reduced Heat Generation: Lower power dissipation due to low RDS(on) minimizes heat generation, improving system reliability.
• High Current Capability: High continuous drain current (120A) allows for use in high-power applications.
• Design Flexibility: Suitable for a wide range of power management applications due to its key specifications.
• Robust Performance: High maximum channel temperature ensures stable performance in demanding conditions.

Additional Details:

The TK50E06K3A/TK50E06K3 N-channel power MOSFET utilizes advanced trench technology to achieve low on-resistance and gate charge. The TO-220SM(W) package enhances thermal performance, allowing for efficient heat removal. This MOSFET is suited for synchronous rectification, DC-DC conversion, and other power management tasks. The component is compliant with RoHS regulations and is lead-free. The part is designed to minimize conduction losses and enhance system efficiency in various high-current applications.