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Same model may have multiple batches, images only for reference.
TK58E06N1 Real Image
Same model may have multiple batches, images only for reference.

TK58E06N1

Part No TK58E06N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 58A TO-220
Datasheet
TK58E06N1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 58A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 3400pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 29A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212901-TK58E06N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK58E06N1 CAD Model

Description

The TK58E06N1 is an N-Channel MOSFET from Toshiba Semiconductor and Storage.

  • It is designed for use in a variety of applications that require high power dissipation and low Rds On.
  • This MOSFET has a medium popularity and a balanced supply and demand status.
  • The TK58E06N1 is a powerful and reliable solution for applications that require high power dissipation and low Rds On.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4623 $50.8530
265+ $0.3794 $100.5410
410+ $0.3675 $150.6750
565+ $0.3557 $200.9705
730+ $0.3438 $250.9740
975+ $0.3082 $300.4950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,660 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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