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Same model may have multiple batches, images only for reference.
TK60S06K3L(T6L1,NQ Real Image
Same model may have multiple batches, images only for reference.

TK60S06K3L(T6L1,NQ

Part No TK60S06K3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 60A DPAK-3 / Trans MOSFET N-CH Si 60V 60A Automotive 3-Pin(2+Tab) DPAK+ T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIV
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2900pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 88W (Tc)
Rds On (Maximum) @ Id, Vgs 8 mOhm @ 30A, 10V
Operating Temperature Range 175°C (TJ)
Mounting SMD
Manufacturer Package DPAK+
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 796847-TK60S06K3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Limited
Family Name TK60S06K3L
Introduction Date July 15, 2011
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian TK60S06K3L(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage TK60S06K3L(T6L1,NQ) is a MOSFET electronic component.

  • Series: U-MOSIV
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating temperature range: 175°C (TJ)
  • Channel type: N-channel
  • Drain source voltage: 60V
  • Gate source threshold voltage: 3V @ 1mA
  • Maximum power dissipation: 88W (Tc)
  • Maximum input capacitance: 2900pF @ 10V
  • EOL date: 2029

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Quantity Unit Price Ext. Price
24+ $2.4486 $58.7664
58+ $2.0097 $116.5626
90+ $1.9462 $175.1580
123+ $1.8838 $231.7074
159+ $1.8214 $289.6026
213+ $1.6320 $347.6160
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