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Same model may have multiple batches, images only for reference.
TK62N60W,S1VF(S
Same model may have multiple batches, images only for reference.

TK62N60W,S1VF(S

Part No TK62N60W,S1VF(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-247
Continuous Drain Current (ID) 61.8 A
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 400 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1099466-TK62N60W,S1VF(S
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK62N60W,S1VF(S CAD Model

Description

The Toshiba Semiconductor and Storage TK62N60W,S1VF(S) is a single element, SMD (SMT) MOSFET transistor with a power dissipation of 400 W.

  • Power Dissipation: 400 W
  • Pins: 3
  • Category: Transistors - FETs, MOSFETs - RF
  • Package: TO-247
  • Gate to Source Voltage: 30 V
  • Alternative Parts: Infineon Technologies IPW60R041C6FKSA1, STW52NK25Z, FCH47N60NF, STW45NM50, Fairchildon Semiconductor FCH47N60, FCH76N60N, and TK62N60WS1VF(S)
  • RoHS Compliant: Yes
  • Radiation Hardening: No
  • Minimum Operating Temperature: -55 °C
  • Maximum Operating Temperature: 150 °C
  • Continuous Drain Current (ID): 61.8 A

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