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Same model may have multiple batches, images only for reference.
TK6A55DA(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK6A55DA(STA4,Q,M)

Part No TK6A55DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 5.5A TO-220SIS
Datasheet
TK6A55DA(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.48 Ohm @ 2.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050556-TK6A55DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK6A55DA(STA4,Q,M) CAD Model

Description

The 1050556-TK6A55DA(STA4,Q,M) from Toshiba Semiconductor and Storage is a medium-popularity electronic component that features MOSFET technology and an N-channel polarity.

This component is known for its high-quality performance and durability, making it a reliable choice for different electronic applications.

  • Technology: MOSFET
  • Channel Polarity: N-Channel
  • Package: TO-220SIS
  • Mounting: Through Hole

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Quantity Unit Price Ext. Price
5+ $13.5135 $67.5675
11+ $11.0880 $121.9680
17+ $10.7415 $182.6055
23+ $10.3950 $239.0850
29+ $10.0485 $291.4065
39+ $9.0090 $351.3510
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Availability: 21,900 pieces
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