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TK6A65D

Part No TK6A65D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS / MOSFET N-CH 650V 5A TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 1.11 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212916-TK6A65D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TK6A65D
Introduction Date April 09, 2009
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian TK6A65D CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-quality product designed for use in electronic devices. With a high popularity and balanced supply and demand status, this MOSFET offers reliable and efficient performance.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current at 25°C: 6A (Ta)
  • Maximum Rds On at Id,Vgs: 1.11 Ohm @ 3A, 10V
  • Case/Package: TO-220SIS
  • Operating Temperature: up to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4045 $50.5625
305+ $0.3319 $101.2295
470+ $0.3215 $151.1050
645+ $0.3112 $200.7240
835+ $0.3008 $251.1680
1,115+ $0.2697 $300.7155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,600 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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