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TK65E10N1,S1X

Part No TK65E10N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 148A TO220
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 148A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 5400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 32.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212911-TK65E10N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK65E10N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel power transistor designed for high voltage and high-speed switching applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 148A @ 25°C
  • Power Dissipation: Up to 192W
  • On-Resistance: 4.8 mOhm @ 32.5A and 10V gate-source voltage
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Package: TO-220-3 case/package
  • Mounting: Through a hole
  • Ideal Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5577 $54.5195
80+ $1.2782 $102.2560
125+ $1.2382 $154.7750
170+ $1.1983 $203.7110
220+ $1.1583 $254.8260
290+ $1.0385 $301.1650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,650 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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