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TK6A80E,S4X

Part No TK6A80E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6A TO220SIS / N-Channel 800 V 6A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVIII
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK6A80
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK6A80ES4X,TK6A80E,S4X(S
Standard Package 50
Win Source Part Number 1113953-TK6A80E,S4X
Ultra Librarian 3D Model Ultra Librarian TK6A80E,S4X CAD Model

Description

The Toshiba Semiconductor and Storage π-MOSVIII series TK6A80E,S4X transistor is a N-channel MOSFET transistor that belongs to the discrete semiconductor products category.

  • Power Dissipation: 45W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
  • Vgs(th) (Max) @ Id: 4V @ 600µA
  • Mounting: Through hole
  • Package/Case: TO-220-3 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4697 $51.6670
260+ $0.3854 $100.2040
405+ $0.3734 $151.2270
555+ $0.3613 $200.5215
720+ $0.3493 $251.4960
960+ $0.3132 $300.6720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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