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Same model may have multiple batches, images only for reference.
TK6P53D Real Image
Same model may have multiple batches, images only for reference.

TK6P53D

Part No TK6P53D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 6A DPAK-3
Datasheet
TK6P53D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212918-TK6P53D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK6P53D CAD Model

Description

The Toshiba Semiconductor and Storage TK6P53D is an N-channel MOSFET transistor. It is a discrete semiconductor product that can handle a maximum power dissipation of 100W (Tc).

  • Drain-Source Breakdown Voltage: 525V
  • Continuous Drain Current: 6A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Rds On at Id,Vgs: 1.3 Ohm @ 3A, 10V
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)

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