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Same model may have multiple batches, images only for reference.
TK72E08N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK72E08N1,S1X

Part No TK72E08N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 80V 72A TO-220
Datasheet
TK72E08N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 72A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 5500pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 36A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212921-TK72E08N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK72E08N1,S1X CAD Model

Description

The MOSFET from Toshiba Semiconductor and Storage is a power transistor that is designed for use in various electronic circuits.

  • Maximum Power Dissipation: 192W (Tc)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 72A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Rds On: 4.3 mOhm @ 36A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220-3
  • Mounting Type: through hole
  • Category: Discrete Semiconductor Products
  • Popularity: medium
  • Supply and Demand: balanced

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24+ $5.0208 $120.4992
36+ $4.8637 $175.0932
50+ $4.7066 $235.3300
64+ $4.5495 $291.1680
85+ $4.0795 $346.7575
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