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Same model may have multiple batches, images only for reference.
TK7A60W,S4VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK7A60W,S4VX

Part No TK7A60W,S4VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO220SIS  /  N-Channel 600 V 7A (Ta) 30W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK7A60
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK7A60W,S4VX(M,TK7A60WS4VX
Standard Package 50
Win Source Part Number 1214796-TK7A60W,S4VX
Ultra Librarian 3D Model Ultra Librarian TK7A60W,S4VX CAD Model

Description

The TK7A60W,S4VX is a N-channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Series: DTMOSIV
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 7A @ 25°C
  • Maximum On-Resistance (Rds On): 600mOhm @ Vgs of 10V and a drain current of 3.5A
  • Gate Charge (Qg): 15 nC @ a Vgs of 10V
  • Input Capacitance (Ciss): 490 pF @ a Vds of 300 V
  • Maximum Vgs: ±30V
  • Operating Temperature Range: Up to 150°C
  • Package Type: TO-220-3 Full Pack

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175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
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