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TK8Q60W,S1VQ

Part No TK8Q60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 8A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 400μA
Max Gate Charge 18.5nC @ 10V
Max Input Capacitance 570pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1050572-TK8Q60W,S1VQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8Q60W,S1VQ CAD Model

Description

The TK8Q60W,S1VQ is a MOSFET electronic component manufactured by Toshiba Semiconductor and Storage.

  • Polarity: N-channel
  • Power Dissipation: 80W (Tc)
  • Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 8A (Ta)
  • Gate-Source Threshold Voltage: 3.7V @ 400μA
  • Maximum Gate Charge: 18.5nC @ 10V
  • Maximum Input Capacitance: 570pF @ 300V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 500 mOhm @ 4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0808 $60.9696
28+ $4.1696 $116.7488
43+ $4.0390 $173.6770
60+ $3.9085 $234.5100
77+ $3.7780 $290.9060
103+ $3.3876 $348.9228
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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