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Same model may have multiple batches, images only for reference.
TK90S06N1L,LQ(O Toshiba
Same model may have multiple batches, images only for reference.

TK90S06N1L,LQ(O

Part No TK90S06N1L,LQ(O
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs
Datasheet
TK90S06N1L,LQ(O Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Category MOSFETs
Technology Si
Mounting Style SMD/SMT
Brand Toshiba
Height 2.3 mm
Length 6.5 mm
Product Type MOSFETs
Subcategory Transistors
Width 5.5 mm
Ultra Librarian 3D Model Ultra Librarian TK90S06N1L,LQ(O CAD Model

Description

  • Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) 
  • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

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