The TLOE1100B is an infrared emitting diode (IRED) from Toshiba Semiconductor and Storage. This diode is designed for applications requiring a source of infrared light, such as remote controls, optical sensors, and security systems. Its key feature is its ability to emit infrared radiation efficiently and reliably.

Applications

• Remote Control Systems: Commonly used in remote controls for controlling TVs, audio equipment, and other consumer electronics.
• Light Barrier Systems: Integrated into light barrier systems for detecting objects or intrusions in security and automation setups.
• Optical Sensors: Employed in optical sensors for object detection, proximity sensing, and light curtain applications.
• Encoders: Used in rotary and linear encoders to provide feedback on position and motion.
• Infrared Communication: Suitable for short-range infrared data transmission purposes.

Features

• High Radiant Intensity: Provides a strong and focused infrared light output.
• Fast Switching Speed: Enables quick response times for efficient data transmission and sensing.
• Narrow Beam Angle: Offers a concentrated beam of infrared light.
• Compact Package: Allows for easy integration into a variety of electronic devices.
• Robust Design: Ensures reliable performance under diverse environmental conditions.

Benefits

• Consistent Performance: Provides stable and dependable infrared light emission.
• Long Operational Life: Offers an extended operational life, reducing maintenance requirements.
• Improved Sensitivity: Enhances the performance of optical sensors and communication systems.
• Space-Saving Design: Allows for compact and efficient system designs.
• Cost-Effective Solution: Provides an optimal balance of performance and affordability.

Additional Details

The TLOE1100B emits infrared light in the 940 nm range. It typically operates with a forward voltage of approximately 1.3V and a forward current of 50mA. Usually comes in a through-hole package, simplifying installation on PCBs. Its focused beam angle helps to increase signal strength and minimize interference. Handling with ESD precautions is essential to preserving device performance and lifespan. Matching it to compatible phototransistors or photodiodes can enhance system sensitivity and overall effectiveness.