The TPC6006-H is a medium-popularity MOSFET manufactured by Toshiba Semiconductor and Storage.

• Application: Designed for use in a variety of electronic applications and is known for its reliable performance.
• Type: N-channel MOSFET
• Drain-Source Breakdown Voltage: Maximum drain-source breakdown voltage of 40V
• Continuous Drain Current: Continuous drain current of 3.9A @ 25°C.
• Gate-Source Threshold Voltage: 2.3V @ 1mA
• Gate Charge: Maximum gate charge of 4.4nC @ 10V
• Input Capacitance: Maximum input capacitance of 251pF @ 10V.
• Package: Packaged in a VS-6 (2.9x2.8) case/package
• Temperature Range: Rated for a temperature range of 150°C (TJ).
• Suitability: Ideal for use in a variety of electronic applications.