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TPC6107(TE85L,F)

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Part No	TPC6107(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 20V 4.5A VS6 2-3T1A
Datasheet	TPC6107(TE85L,F) Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2V, 4.5V
Gate-Source Threshold Voltage	1.2V @ 200μA
Max Gate Charge	9.8nC @ 5V
Max Input Capacitance	680pF @ 10V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	700mW (Ta)
Maximum Rds On at Id,Vgs	55 mOhm @ 2.2A, 4.5V
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	VS-6 (2.9x2.8)
Dimension	SOT-23-6 Thin, TSOT-23-6
Win Source Part Number	213260-TPC6107(TE85L,F)
Popularity	Medium
Supply and Demand Status	Sufficient
Application Field	Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model	Ultra Librarian TPC6107(TE85L,F) CAD Model

Alternative Products

Description

This MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete semiconductor product manufactured by Toshiba Semiconductor and Storage.

Part number: 213260-TPC6107(TE85L,F)
Availability: in the open market
Supply and demand status: sufficient
Function: switch and amplify electronic signals
Applications: industrial, power management, and portable devices

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