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TPC8012-H

Part No TPC8012-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.8A 8-SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 440pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 900mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 213262-TPC8012-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8012-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-channel power transistor with a maximum power dissipation of 1W @ Ta temperature.

  • Application: Discrete Semiconductor Products
  • Mounting: surface-mount device (SMD)
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 1.8A
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 11nC @ 10V
  • Package: 8-SOP (5.5x6.0)
  • Dimension: 8-SOIC (0.173", 4.40mm Width)
  • Supply and demand status: balanced

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