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Same model may have multiple batches, images only for reference.
RJK2555DPA-00#J0 Real Image
Same model may have multiple batches, images only for reference.

RJK2555DPA-00#J0

Part No RJK2555DPA-00#J0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 17A TO3P / Trans MOSFET N-CH Si 250V 17A Automotive 8-Pin WPAK EP T/R
Datasheet
RJK2555DPA-00#J0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2400pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 104 mOhm @ 8.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-WPAK
Package 8-PowerWDFN
Win Source Part Number 793227-RJK2555DPA-00#J0
Popularity Medium
Supply and Demand Status Limited
Family Name RJK2555DPA-00
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK2555DPA-00#J0 CAD Model

Description

The RJK2555DPA-00 series from Renesas Electronics America is a MOSFET technology with a channel type type N.

  • Current-Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drain-Source Voltage: 250V
  • Gate Charge (Qg) (Maximum) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2400pF @ 25V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Power Dissipation (Maximum): 30W (Tc)
  • Package: 8-PowerWDFN
  • Mounting: SMD
  • Family Name: RJK2555DPA-00
  • Manufacturer Package: 8-WPAK

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