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Same model may have multiple batches, images only for reference.
TK65S04K3L(T6L1,NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK65S04K3L(T6L1,NQ

Part No TK65S04K3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 65A DPAK-3
Datasheet
TK65S04K3L(T6L1,NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 2800pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 32.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107458-TK65S04K3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK65S04K3L(T6L1,NQ CAD Model

Description

This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage and is part of the Discrete Semiconductor Products category.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 88W
  • Drain-Source Breakdown Voltage: 40V
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Counterfeit Risk: 66% chance in the open market

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