The TPC8035-H(TF12L) is an N-channel Power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications, offering a combination of low on-resistance and fast switching speed.

Applications

• DC-DC Converters
• AC-DC Power Supplies
• Motor Control Circuits
• Load Switching
• Power Management Systems

Features

• N-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(on))
• High-Speed Switching
• Low Gate Charge (Qg)
• Avalanche Energy Rated
• Surface Mount Package (SOP-Advance)

Benefits

• Improved Efficiency: The low RDS(on) minimizes conduction losses, increasing the overall efficiency of the power circuit.
• Faster Switching Speeds: Reduces switching losses, making it suitable for high-frequency applications.
• Reduced Gate Drive Requirements: The low gate charge simplifies the gate drive circuitry.
• Enhanced Reliability: Avalanche energy rating provides robustness against voltage spikes.
• Compact Design: The SOP-Advance package provides good thermal performance in a small footprint.

Technical Specifications

The TPC8035-H(TF12L) features a very low drain-source on-resistance, typically in the milliohm range. The gate charge is low. The MOSFET can handle significant drain current and drain-source voltage. The operating temperature range is broad. It comes in a surface mount SOP-Advance package, which offers enhanced thermal characteristics. It is designed for high efficiency and fast switching applications.