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Same model may have multiple batches, images only for reference.
TPC8066-H Real Image
Same model may have multiple batches, images only for reference.

TPC8066-H

Part No TPC8066-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8SOP
Datasheet
TPC8066-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1100pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 056783-TPC8066-H
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8066-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity transistor with a drain-source breakdown voltage of 30V.

  • Maximum Continuous Drain Current: 11A @ 25°C
  • Maximum Power Dissipation: 1W @ Ta
  • Gate-Source Threshold Voltage: 2.3V @ 100μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 16 mOhm @ 5.5A, 10V
  • Package: 8-SOP package
  • Ideal for: use in discrete semiconductor products
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Maximum Gate Charge: 15nC @ 10V
  • Supply and demand status: limited

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