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TPC8129,LQ

Part No TPC8129,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8SOP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 200μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1650pF @ 10V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 056803-TPC8129,LQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8129,LQ CAD Model

Description

The Toshiba Semiconductor and Storage electronic component with Win Source Part Number 056803-TPC8129,LQ is a P-Channel MOSFET designed to provide efficient and reliable performance in electronic devices.

  • Power Dissipation: 1W (Ta)
  • Continuous Drain Current: 9A (Ta) @ 25°C
  • Maximum Gate-Source Voltage: +20V and -25V
  • Temperature Range: up to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4346 $52.1520
285+ $0.3566 $101.6310
435+ $0.3454 $150.2490
600+ $0.3343 $200.5800
775+ $0.3231 $250.4025
1,040+ $0.2897 $301.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,092 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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