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Same model may have multiple batches, images only for reference.
TPC8A02 Real Image
Same model may have multiple batches, images only for reference.

TPC8A02

Part No TPC8A02
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A SOP8 2-6J1B
Datasheet
TPC8A02 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1970pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056441-TPC8A02
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8A02 CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel surface mount transistor with a maximum power dissipation of 1W (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: @ 25°C of 16A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 34nC @ 10V
  • Maximum Rds On: 5.6 mOhm @ 8A, 10V
  • Supply and Demand Status: of this transistor is limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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