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Same model may have multiple batches, images only for reference.
TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCA8009-H(TE12L,Q

Part No TPCA8009-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 7A 8-SOPA / Trans MOSFET N-CH Si 150V 7A 8-Pin SOP Advance T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 600pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.6W (Ta), 45W (Tc)
Rds On (Maximum) @ Id, Vgs 350 mOhm @ 3.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SOP Advance (5x5)
Package 8-PowerVDFN
Win Source Part Number 797816-TPCA8009-H(TE12L,Q
Popularity Medium
Supply and Demand Status Balance
Family Name TPCA8009-H
Introduction Date June 03, 2004
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian TPCA8009-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCA8009-H is a MOSFET with a drain source voltage of 150V. Toshiba Semiconductor and Storage

  • Drain Source Voltage: 150V
  • Power Dissipation (Maximum) (Ta): 1.6W
  • Power Dissipation (Maximum) (Tc): 45W
  • Channel Type: N
  • Gate Charge (Qg): 10nC @ 10V
  • Input Capacitance (Ciss): 600pF @ 10V
  • Package: 8-powerVDFN
  • Operating Temperature Range: 150°C (TJ)
  • Status: Obsolete (EOL)

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