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TPCA8016-H(TE12L,Q)

Part No TPCA8016-H(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 25A 8-SOPA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 1375pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 13A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056817-TPCA8016-H(TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8016-H(TE12L,Q) CAD Model

Description

The TPCA8016-H(TE12L,Q) is an N-channel MOSFET from Toshiba Semiconductor and Storage designed for power management and switching applications with an emphasis on automotive applications.

Applications

  • DC-DC Converters
  • Automotive Power Management
  • Motor Control
  • Load Switching

Features

  • N-Channel MOSFET
  • Low On-Resistance
  • High-Speed Switching
  • AEC-Q101 Qualified
  • Lead-Free Package

Benefits

  • High Efficiency Power Conversion
  • Reduced Power Loss
  • Automotive Grade Reliability
  • Compact Design
  • RoHS Compliant

Additional Details

The TPCA8016-H(TE12L,Q) is an N-channel MOSFET featuring a low on-resistance for minimized conduction losses and enhanced power conversion efficiency. Its high-speed switching capabilities make it suitable for demanding applications. The device's AEC-Q101 qualification ensures reliability and robustness in automotive environments. The lead-free package meets RoHS standards. Designed as a surface mount device, it supports compact system designs and streamlined manufacturing. This MOSFET is commonly used in automotive power management systems, DC-DC converters, and motor control applications where high efficiency and reliability are crucial. When incorporating this device, ensure a proper gate drive voltage and appropriate thermal management to prevent overheating. The datasheet contains detailed information on electrical characteristics, thermal performance, and absolute maximum ratings. Always refer to the datasheet before using in any application. The 'H' signifies a lead-free and RoHS-compliant package. The suffix (TE12L,Q) indicates tape and reel packaging and automotive qualification details. This MOSFET provides efficient and reliable power switching in demanding automotive environments and various power applications.

The device is designed for automotive applications. The component is built for systems that require efficiency. Consideration must be taken for the device's safe operating area.

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