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TPCA8057-H,LQ

Part No TPCA8057-H,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 42A 8SOP-ADV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 42A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 500μA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 5200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 57W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 21A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 043261-TPCA8057-H,LQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8057-H,LQ CAD Model

Description

The TPCA8057-H,LQ is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Category: Discrete semiconductor product
  • Popularity: Medium
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 42A
  • Maximum Rds On: 2.6 mOhm @ 21A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16,670+ $0.0035 $58.3450
33,335+ $0.0035 $116.6725
50,000+ $0.0035 $175.0000
66,670+ $0.0035 $233.3450
83,335+ $0.0035 $291.6725
150,000+ $0.0023 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,030 pieces
MOQ: 16670 pcs
Order Increment : 1 pcs
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