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TPCA8057-H

Part No TPCA8057-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 42A 8SOP-ADV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 42A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 500μA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 5200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 57W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 21A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 213282-TPCA8057-H
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8057-H CAD Model

Description

The Toshiba Semiconductor and Storage 213282-TPCA8057-H is a high-popularity N-channel MOSFET component that offers exceptional performance and reliability.

  • Popularity: High
  • Power Dissipation: 1.6W (Ta) and 57W (Tc)
  • Temperature Range: Up to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 42A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 500μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,600 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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