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Same model may have multiple batches, images only for reference.
TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCC8008(TE12L,QM)

Part No TPCC8008(TE12L,QM)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A 8TSON
Datasheet
TPCC8008(TE12L,QM) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1A
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1600pF @ 10V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON
Dimension 8-VDFN Exposed Pad
Win Source Part Number 097328-TPCC8008(TE12L,QM)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCC8008(TE12L,QM) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFETs is a discrete semiconductor product that is designed for various electronic applications.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 097328-TPCC8008(TE12L,QM)
  • Polarity: This product is designed with N-Channel polarity and has a maximum power dissipation of 700mW (Ta), 30W (Tc).
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Technology: MOSFET
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: 150°C (TJ)
  • Popularity: medium
  • Supply and Demand Status: sufficient.

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