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TPCC8103(TE12L,QM)

Part No TPCC8103(TE12L,QM)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 18A 8TSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON
Dimension 8-VDFN Exposed Pad
Win Source Part Number 097295-TPCC8103(TE12L,QM)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCC8103(TE12L,QM) CAD Model

Description

The TPCC8103(TE12L,QM) is a P-Channel MOSFET integrated circuit manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 700mW (Ta), 27W (Tc)
  • Suitability: It is suitable for use in various electronic devices.
  • Supply and Demand Status: sufficient
  • Recommendation: The TPCC8103(TE12L,QM) is recommended for those who need a reliable and efficient component for their electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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