The TPCC8136 is a P-channel MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency power management applications. This MOSFET features a low on-resistance, which minimizes power loss during switching, making it suitable for various DC-DC converter circuits and load switching applications.

Applications

• DC-DC converters
• Load switching
• Power management circuits in portable devices
• Motor control circuits

Features

• P-channel MOSFET
• Low drain-source on-resistance (RDS(on))
• Low input capacitance
• High-speed switching
• Available in a small surface-mount package
• Halogen-free

Benefits

• Improved energy efficiency due to low RDS(on)
• Reduced power loss and heat generation
• Faster switching speeds for high-frequency applications
• Compact design for space-constrained applications
• Environmentally friendly due to halogen-free construction
• Enhanced thermal performance

Technical Specifications

The TPCC8136 features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -4.5A. The typical RDS(on) is 45 mΩ at VGS = -10V and 65 mΩ at VGS = -4.5V. The gate-source threshold voltage (VGS(th)) is typically between -1.0V and -3.0V. It is available in a small LQ package, suitable for high-density circuit board assemblies. The device is RoHS compliant.

This MOSFET is designed to provide efficient and reliable power switching in a variety of applications. Its low on-resistance and fast switching speed make it an excellent choice for designs where power efficiency and size are critical.