The TPCP8102(TE85L) is a P-channel MOSFET from Toshiba Semiconductor and Storage. It's designed for use in various power management applications, offering efficient switching and low power loss. This device is particularly suitable for load switching and DC-DC conversion circuits.

Applications

• Load switching
• DC-DC converters
• Power management in portable devices
• Battery protection circuits

Features

• P-channel MOSFET
• Low drain-source on-resistance (RDS(on))
• Fast switching speed
• Surface-mount package (TE85L)
• Lead-free

Benefits

• Improved power efficiency
• Reduced heat generation
• Suitable for high-frequency applications
• Compact design for space-constrained environments
• Environmentally friendly due to lead-free construction

Technical Specifications

The TPCP8102(TE85L) features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -7A. The RDS(on) is typically 25 mΩ at VGS = -10V and 38 mΩ at VGS = -4.5V. The gate-source threshold voltage (VGS(th)) ranges from -1.0V to -3.0V. It's available in a TE85L surface-mount package. The device is RoHS compliant.

This P-channel MOSFET is designed to provide efficient and reliable power switching. Its low on-resistance and fast switching speed make it an excellent choice for designs where power efficiency and size are critical. The TPCP8102(TE85L) contributes to improved overall system performance and reduced energy consumption.