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TPH2R306NH,L1Q(M

Part No TPH2R306NH,L1Q(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 14+
Reference case SOP8
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 750272-TPH2R306NH,L1Q(M
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPH2R306NH,L1Q(M CAD Model

Description

The Toshiba TPH2R306NH,L1Q(M is an N-channel power MOSFET designed for high-efficiency switching applications. Manufactured by Toshiba Semiconductor and Storage, it features low on-resistance and high-speed switching characteristics.

Applications

  • DC-DC Converters: Used in voltage regulation and conversion circuits.
  • Power Supplies: Ideal for power supplies in various electronic devices.
  • Motor Control: Efficiently controls power to motors in a variety of applications.
  • Load Switches: Used to switch power to various loads.
  • Synchronous Rectification: Increases efficiency in power conversion applications.

Features

  • N-Channel MOSFET: Enhances design flexibility and efficiency.
  • Low On-Resistance (R<sub>DS(on)): Minimizes power loss during switching.
  • High-Speed Switching: Enables efficient operation at high frequencies.
  • Low Gate Charge (Q<sub>g): Reduces switching losses.
  • Avalanche Rated: Withstands high transient voltages.
  • Lead-Free Package: Compliant with environmental regulations.
  • Surface Mount Technology: Facilitates automated assembly.

Benefits

  • High Efficiency: Minimizes power dissipation in switching applications.
  • Improved Thermal Performance: Reduces heat generation.
  • Simplified Circuit Design: Enables compact and efficient designs.
  • Enhanced System Reliability: Provides robust performance under various conditions.
  • Environmentally Friendly: Complies with RoHS standards.

Additional Details

The TPH2R306NH,L1Q(M) boasts an ultra-low drain-source on-resistance which minimizes conduction losses and improves overall efficiency. It is housed in a surface-mount package optimized for thermal performance. Its key specifications include a drain-source voltage (V<sub>DSS) rating, gate-source voltage (V<sub>GS) rating, and continuous drain current (I<sub>D) rating. The MOSFET also features a low gate charge, further enhancing its switching performance. Designers should consult the datasheet for detailed specifications, application notes, and layout recommendations to ensure optimal performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6219 $52.8615
200+ $0.5103 $102.0600
305+ $0.4943 $150.7615
420+ $0.4784 $200.9280
545+ $0.4624 $252.0080
725+ $0.4146 $300.5850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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