The Toshiba Semiconductor and Storage TPH2R506PL,L1Q is a MOSFET transistor that falls under the category of discrete semiconductor products.

• FET Type: Single N-channel
• Drain-to-Source Voltage (Vdss): 60 V
• Continuous Drain Current (Id): 100A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Power Dissipation (Max): 132W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
• Vgs (Max): ±20V
• Operating Temperature Range: 175°C (TJ)
• Package: 8-PowerVDFN