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Same model may have multiple batches, images only for reference.
TPH8R008NH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPH8R008NH,L1Q

Part No TPH8R008NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 80V 34A SOP
Datasheet
TPH8R008NH,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 3000pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 61W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 17A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111186-TPH8R008NH,L1Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPH8R008NH,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-Channel power MOSFET designed for a wide range of applications.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 34A
  • Power Dissipation: Up to 1.6W (Ta) and 61W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 500μA
  • Maximum Gate Charge: 35nC @ 10V
  • Package Size: 8-SOP Advance (5x5)
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand: Sufficient

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