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TPN13008NH,L1Q

Name: TPN13008NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 757634
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	TPN13008NH,L1Q
Manufacturer	Toshiba Semiconductor and Storage
Catalog	FETs - Single
Description	MOSFET N-CH 80V 40A 8TSON
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	80V
Id - Continuous Drain Current	18A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	13.3mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 200μA
Gate Charge (Qg) (Maximum) at Vgs	18nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1600pF at 40V
Power Dissipation (Maximum)	700mW, 42W
Temperature Range - Operating	150°C
Mounting Style	SMD
Supplier Device Package	8-TSON Advance (3.3x3.3)
Manufacturer Package	8-PowerVDFN
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	757634-TPN13008NH,L1Q
Popularity	Low
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian TPN13008NH,L1Q CAD Model

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Description

The TPN13008NH,L1Q is an N-channel MOSFET from Toshiba Semiconductor and Storage.

Maximum Drain-Source Voltage: 80V
Continuous Drain Current: 18A
Features: low on-resistance, fast switching speed, and low gate charge.
Package: supplied in an 8-TSON Advance package and is RoHS compliant.
Suitable for: use in a wide range of applications, including power supplies, motor drives, and other high-current switching circuits.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
10+	$5.9806	$59.8060
24+	$4.9064	$117.7536
37+	$4.7540	$175.8980
51+	$4.6004	$234.6204
65+	$4.4468	$289.0420
87+	$3.9871	$346.8777

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,000 pieces

MOQ: 10 pcs

Order Increment : 1 pcs

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