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TPN22006NH,LQ

Part No TPN22006NH,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 9A 8-TSON / Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Vgs(th) (Maximum) @ Id 4V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 710pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 700mW (Ta), 18W (Tc)
Rds On (Maximum) @ Id, Vgs 22 mOhm @ 4.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSON Advance (3.3x3.3)
Package 8-PowerVDFN
Win Source Part Number 792443-TPN22006NH,LQ
Popularity Medium
Supply and Demand Status Balance
Family Name TPN22006NH
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TPN22006NH,LQ CAD Model

Description

The Toshiba Semiconductor and Storage TPN22006NH,LQ MOSFET, manufactured by Toshiba Semiconductor and Storage, has the following specifications:

  • Channel Type: N
  • Drain-Source Voltage: 60V
  • Continuous Drain Current: 9A
  • Maximum Power Dissipation: 700mW
  • Maximum Gate-Source Voltage: ±20V
  • Gate Threshold Voltage: 4V @ 100μA
  • Maximum Input Capacitance: 710pF @ 30V
  • Maximum Gate Charge: 12nC @ 10V
  • Package: 8-TSON Advance
  • Mounting: Surface Mountable
  • ECCN: EAR99
  • Made In: China
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $4.1210 $61.8150
35+ $3.3818 $118.3630
53+ $3.2756 $173.6068
73+ $3.1705 $231.4465
95+ $3.0642 $291.0990
127+ $2.7477 $348.9579
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,900 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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