The Toshiba Semiconductor and Storage U-MOSIX-H series MOSFET is a great choice for your electronic circuit.

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Power Dissipation (Max): 630mW (Ta), 104W (Tc)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-TSON Advance (3.1x3.1)
• Vgs (Max): ±20V
• Operating Temperature: 175°C
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Continuous Drain Current (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20V