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Same model may have multiple batches, images only for reference.
TTA003,L1NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TTA003,L1NQ

Part No TTA003,L1NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 3A PW-MOLD
Datasheet
TTA003,L1NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 2V
Maximum Power Dissipation 10W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PW-MOLD
Win Source Part Number 213572-TTA003,L1NQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TTA003,L1NQ CAD Model

Description

The TTA003,L1NQ is a PNP transistor manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: balance
  • Applications: switching and amplification circuits
  • Maximum Collector-Emitter Breakdown Voltage: 80V
  • Maximum Current Collector: 3A
  • Typical Gain: 100 @ 500mA and 2V
  • Collector-Emitter Saturation Voltage: low
  • Collector Cut-Off Current: low

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39+ $3.0122 $117.4758
60+ $2.9175 $175.0500
82+ $2.8240 $231.5680
106+ $2.7293 $289.3058
142+ $2.4474 $347.5308
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