The 3N90L-TF3-T is a N-Channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for high-voltage, high-speed switching applications. It features a robust design and is optimized for efficiency and reliability in power electronic circuits.

Applications

• Power supplies
• DC-DC converters
• Motor control
• High-voltage switching regulators
• Lighting applications

Features

• N-Channel enhancement mode MOSFET
• High voltage capability
• Low gate charge (Qg)
• Fast switching speed
• Low drain-source on-resistance (RDS(on))
• High ruggedness
• Lead-free plating

Benefits

• Improved power efficiency due to low RDS(on), reducing power loss and heat generation.
• Enhanced switching performance enables higher operating frequencies, shrinking the size of passive components.
• Increased system reliability due to robust design and high voltage capability.
• Simplified thermal management due to reduced power dissipation.
• Meets environmental regulations with lead-free plating.

Additional Details

The 3N90L-TF3-T is characterized by its low gate charge, which minimizes switching losses and improves efficiency. Its fast switching speed enables the design of high-frequency power converters. The device's low RDS(on) further reduces conduction losses, contributing to overall system efficiency. The 'TF3' likely refers to the package type, commonly a TO-251 or similar, and the '-T' often denotes tape and reel packaging for automated assembly.

Technical Specifications (Typical):

• Drain-Source Voltage (VDS): 900V
• Gate-Source Voltage (VGS): ±30V
• Drain Current (ID): Refer to datasheet for continuous and pulsed values
• RDS(on): Refer to datasheet for specific value at given VGS and ID
• Operating Temperature: -55°C to +150°C