The 4N60L-TM3-T is an N-channel enhancement mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.), designed for high-voltage, high-speed switching applications. This MOSFET features a low gate charge and on-resistance, which improves efficiency in power conversion.

Applications:

• Switching Power Supplies (SMPS)
• Power Factor Correction (PFC)
• DC-DC converters
• Electronic Ballasts
• Motor control circuits
• Uninterruptible Power Supplies (UPS)

Features:

• N-Channel enhancement mode
• Low gate charge
• Low on-resistance
• 600V Drain-Source Voltage
• Fast switching speed
• Avalanche rated
• Lead-free and RoHS compliant

Benefits:

• High efficiency in power conversion
• Reduced power loss
• Suitable for high voltage applications
• Improved system reliability
• Environmentally friendly

Additional Details:

The 4N60L-TM3-T comes in a TO-220 package for effective heat dissipation. The maximum drain-source voltage (VDS) is 600V. Continuous drain current (ID) depends on the case temperature. The gate-source voltage (VGS) is typically ±30V. RDS(on) (drain-source on-resistance) is a key parameter, tested at specific VGS and ID values. The total gate charge (Qg) is low, contributing to faster switching and higher efficiency. The avalanche energy rating signifies its resilience to voltage spikes.

This MOSFET is ideal for efficient and dependable power switching. Its low on-resistance minimizes conduction losses, while fast switching reduces switching losses. The high voltage capability enables its use in high-voltage power supplies and converters. The avalanche energy rating enhances protection against transient voltages. Lead-free construction ensures environmental compliance.