The 6N10L-TN3-R is an N-Channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for high-efficiency switching applications, offering a low on-resistance and fast switching speed. It is suitable for various power management and motor control applications.

Applications:

• DC-DC converters
• Power inverters
• Motor control circuits
• LED lighting
• Power supplies

Features:

• N-Channel enhancement mode MOSFET
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche energy
• Excellent gate charge characteristics
• Lead-free package

Benefits:

• High efficiency in power conversion
• Reduced power loss and heat generation
• Improved system performance
• Enhanced reliability and robustness
• Simplified thermal management
• Environmentally friendly

Specifications:

The 6N10L-TN3-R typically features a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 6A. The on-resistance (RDS(on)) is typically around 1.2 Ohms at a gate-source voltage of 10V. The device is typically packaged in a TO-252 package. For detailed specifications and performance curves, refer to the official UTC datasheet.

The 6N10L-TN3-R MOSFET provides a combination of high voltage capability, low on-resistance, and fast switching speed, making it a suitable choice for a wide range of power electronic applications.