The UTT80N08 is an N-Channel Power MOSFET from UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for high-efficiency power switching in various applications, offering a good balance of low on-resistance and fast switching speed.

Applications:

• Synchronous Rectification
• DC-DC Converters
• Power Management Systems
• Motor Control

Features:

• N-Channel MOSFET
• Low On-Resistance: RDS(on) = 0.008 Ω (Typ) at VGS = 10V
• Fast Switching Speed
• Low Gate Charge
• 100% Avalanche Tested
• Lead-Free Finish; RoHS Compliant

Benefits:

• Improved efficiency in power conversion circuits due to its low on-resistance, reducing conduction losses.
• Reduced switching losses thanks to its fast switching capabilities.
• Enhanced system reliability and robustness as demonstrated by the 100% avalanche testing.
• Environmentally friendly due to its lead-free and RoHS compliant construction.

Detailed Specifications:

• Drain-Source Voltage (VDSS): 80V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 80A (limited by package)
• Pulsed Drain Current (IDM): 240A
• Single Pulse Avalanche Energy (EAS): 80 mJ
• Operating and Storage Temperature Range: -55 to +175 °C
• Maximum Power Dissipation (PD): 150W

The UTT80N08's optimized design makes it suitable for a wide array of power management and switching applications. The low on-resistance minimizes conduction losses, while the fast switching speed reduces switching losses. The 100% avalanche testing ensures robust and reliable performance in demanding environments. This MOSFET is often used in synchronous rectification and other high-efficiency power conversion systems. The device is available in a surface mount package.