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50N03-06P

Part No 50N03-06P
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 84A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 4.5V
Max Input Capacitance 3100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.3W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 197764-50N03-06P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 50N03-06P CAD Model

Description

50N03-06P Transistor

The 50N03-06P is a high-efficiency MOSFET designed to meet the demands of advanced electronic circuits. Its robust design allows for diverse usage in both consumer and industrial applications.

  • Applications:
    • DC-DC converters
    • Power amplifiers
    • Load switching
    • Telecommunications equipment
  • Features and Benefits:
    • Excellent conduction and switching losses minimized
    • High current capability
    • Reduced power dissipation
    • Durable for long-term operation under varied conditions

    The 50N03-06P provides significant advantages in terms of longevity and reliability, which are crucial factors for use in demanding electronic environments.

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