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Same model may have multiple batches, images only for reference.
IRC730PBF Real Image
Same model may have multiple batches, images only for reference.

IRC730PBF

Part No IRC730PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 5.5A TO-220-5
Datasheet
IRC730PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-5
Dimension TO-220-5
Win Source Part Number 1046382-IRC730PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRC730PBF CAD Model

Description

This N-channel MOSFET features current sensing and has a maximum power dissipation of 74W (Tc).

  • Power Dissipation: 74W (Tc)
  • Package: TO-220-5
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current @ 25°C: 5.5A (Tc)
  • Maximum Rds On @ Id,Vgs: 1 Ohm @ 3.3A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 700pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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