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Same model may have multiple batches, images only for reference.
IRF510STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF510STRLPBF

Part No IRF510STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.6A D2PAK
Datasheet
IRF510STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.3nC @ 10V
Max Input Capacitance 180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046500-IRF510STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF510STRLPBF CAD Model

Description

The IRF510STRLPBF is a N-Channel MOSFET manufactured by Vishay.

  • Maximum Power Dissipation: 43W
  • Drain-Source Breakdown Voltage: 100V
  • Package: Reel
  • Mounting: Surface Mount
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9012 $57.0360
65+ $1.5600 $101.4000
100+ $1.5113 $151.1300
140+ $1.4625 $204.7500
180+ $1.4138 $254.4840
240+ $1.2675 $304.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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