IRF510STRLPBF

Part No IRF510STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.6A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.3nC @ 10V
Max Input Capacitance 180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046500-IRF510STRLPBF
Popularity Medium
Supply and Demand Status Balance

Description

The IRF510STRLPBF is a N-Channel MOSFET manufactured by Vishay. This component is designed to provide superior performance and reliability in a wide range of applications. With a maximum power dissipation of 43W and a drain-source breakdown voltage of 100V, this MOSFET is perfect for high power applications. It is supplied in a reel package and is suitable for surface mount applications. The popularity of this component is medium and its supply and demand status is balanced.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
105+ $0.4940 $51.8700
250+ $0.4050 $101.2500
385+ $0.3930 $151.3050
530+ $0.3800 $201.4000
685+ $0.3670 $251.3950
915+ $0.3290 $301.0350
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 20,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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