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Same model may have multiple batches, images only for reference.
IRF520S Real Image
Same model may have multiple batches, images only for reference.

IRF520S

Part No IRF520S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 100V 9.2A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 9.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 270mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 3.7W, 60W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187032-IRF520S
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF520S CAD Model

Description

The Vishay Siliconix IRF520S is a MOSFET technology-based electronic component with N-Channel transistor polarity.

  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.2A
  • Packaging: Tube
  • Mounting Style: SMD
  • Manufacturer's Homepage: www.vishay.com
  • Power Dissipation: 3.7W
  • Maximum Power Dissipation: 60W
  • Win Source Part Number: 1187032-IRF520S

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