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Same model may have multiple batches, images only for reference.
IRF610SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF610SPBF

Part No IRF610SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.3A D2PAK
Datasheet
IRF610SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046523-IRF610SPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF610SPBF CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has a power dissipation of 3W (Ta), 36W (Tc).

  • Power Dissipation: 3W (Ta), 36W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Risk of Being Fake: Moderate
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,626 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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