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Same model may have multiple batches, images only for reference.
IRF610STRLPBF
Same model may have multiple batches, images only for reference.

IRF610STRLPBF

Part No IRF610STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.3A D2PAK
Datasheet
IRF610STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 117377-IRF610STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF610STRLPBF CAD Model

Description

The Vishay 117377-IRF610STRLPBF is an N-Channel MOSFET with a maximum power dissipation of 3W (Ta), 36W (Tc).

  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 3.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2A, 10V
  • Ideal for: Discrete semiconductor products

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85+ $1.2189 $103.6065
130+ $1.1808 $153.5040
180+ $1.1427 $205.6860
230+ $1.1046 $254.0580
305+ $0.9904 $302.0720
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