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Same model may have multiple batches, images only for reference.
IRF620 Real Image
Same model may have multiple batches, images only for reference.

IRF620

Part No IRF620
Manufacturer Vishay
Catalog FETs - Single
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | MOSFET N-CH 200V 5.2A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 5.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 50W
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187082-IRF620
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Commercial
Ultra Librarian 3D Model Ultra Librarian IRF620 CAD Model

Description

The Vishay Siliconix IRF620 is a N-Channel MOSFET transistor that is commonly used in industrial, power management, and commercial applications.

  • Manufacturer: Vishay Siliconix
  • Product Name: IRF620
  • Channel Type: N-Channel
  • Maximum Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 5.2A
  • Maximum Rds On @ Id, Vgs: 800mOhm @ 3.1A, 10V
  • Gate-Source Voltage (th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 260pF @ 25V
  • Package: TO-220AB
  • Power Dissipation (maximum): 50W
  • Status: Obsolete

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280+ $0.3616 $101.2480
430+ $0.3503 $150.6290
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